PART |
Description |
Maker |
Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor
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Infineon Technologies AG
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RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
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TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC Max Power 43 W BTL ??4 ch Audio Power IC Max Power 43 W BTL 】 4 ch Audio Power IC IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC Max Power 43 W BTL × 4 ch Audio Power IC Max Power 43 W BTL x 4 ch Audio Power IC
|
Toshiba Semiconductor
|
AT73C224-A AT73C224-B AT73C224-E AT73C224-G AT73C2 |
Power Management and Analog Companions (PMAAC) 1-CHANNEL POWER SUPPLY SUPPORT CKT, QCC32 Ultra-low Power Real-time Clock (RTC) and Backup Battery Management Activation of the Power Management Modules via Dedicated Enable Pin
|
聚兴科技股份有限公司 ATMEL Corporation
|
FSB147HNY |
Meets 2013 ErP Standby Power Regulation (Less than 0.5 W Consumption with 0.25 W Load) for ATX Power and LCD TV Power
|
List of Unclassifed Manufacturers
|
IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages OptiMOS2 Power-Transistor OptiMOS2功率晶体 30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. Vishay Intertechnology, Inc.
|
2SD1267A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1745 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SC3942 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
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